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MJE182G
Bipolar (BJT) Single Transistor, NPN, 80 V, 3 A, 1.5 W, TO-225, Through Hole
12,369 有存貨
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12369 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$33.340 |
| 10+ | NT$21.810 |
| 100+ | NT$14.490 |
| 500+ | NT$10.060 |
| 1000+ | NT$9.450 |
| 5000+ | NT$8.870 |
價格Each
最少: 1
多項: 1
NT$33.34
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產品訊息
製造商ONSEMI
製造商產品編號MJE182G
訂購代碼2535633
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current3A
Power Dissipation1.5W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min12hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
產品總覽
The MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices.
- High DC current gain
- High current-gain - bandwidth
- Annular construction for low leakages
- Epoxy meets UL94V-0 flammability rating
- 100VDC Collector to base voltage (VCBO)
- 7V Emitter to base voltage (VEBO)
- 6A Peak collector current
- 1ADC Base current (IB)
- 10°C/W Thermal resistance, junction to case
- 83.4°C/W Thermal resistance, junction to ambient
應用
Power Management, Audio, Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
3A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
12hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
1.5W
Transistor Mounting
Through Hole
Transition Frequency
50MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000726