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MJE3055TG
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 75 W, TO-220, Through Hole
2,374 有存貨
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1 件可于 1-2 個工作日後配送(新加坡 件庫存)
2373 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$21.370 |
| 10+ | NT$16.680 |
| 100+ | NT$15.080 |
| 500+ | NT$14.610 |
| 1000+ | NT$14.140 |
| 5000+ | NT$13.670 |
價格Each
最少: 1
多項: 1
NT$21.37
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產品訊息
製造商ONSEMI
製造商產品編號MJE3055TG
訂購代碼2535636
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation75W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
產品總覽
The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
- DC current gain specified to 10A
- High current gain - bandwidth
- 70VDC Collector to base voltage (VCBO)
- 5V Emitter to base voltage (VEBO)
- 6ADC Base current (IB)
- 1.67°C/W Thermal resistance, junction to case
應用
Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
5hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
75W
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
MJE3055TG 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002808