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MJE5852G
Bipolar (BJT) Single Transistor, PNP, 400 V, 8 A, 80 W, TO-220AB, Through Hole
440 有存貨
400 即日起您可預購補貨
440 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$121.570 |
| 10+ | NT$65.600 |
| 100+ | NT$60.850 |
| 500+ | NT$56.100 |
| 1000+ | NT$51.340 |
價格Each
最少: 1
多項: 1
NT$121.57
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產品訊息
製造商ONSEMI
製造商產品編號MJE5852G
訂購代碼9555889
Product RangeMJxxxx
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max400V
Continuous Collector Current8A
Power Dissipation80W
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product RangeMJxxxx
Qualification-
MSL-
SVHCLead (27-Jun-2024)
產品總覽
The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
- Fast turn-off times
- Complementary to the MJE13007 series
- 6V Emitter to base voltage (VEBO)
- 16ADC Peak collector current
- 4ADC Base current (IB)
- 1.25°C/W Thermal resistance, junction to case
應用
Industrial, Power Management
技術規格
Transistor Polarity
PNP
Continuous Collector Current
8A
Transistor Case Style
TO-220AB
No. of Pins
3Pins
DC Current Gain hFE Min
15hFE
Product Range
MJxxxx
MSL
-
Collector Emitter Voltage Max
400V
Power Dissipation
80W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001814