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MMBD301LT1G
RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 450 mV, 0.9 pF, SOT-23
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產品訊息
製造商ONSEMI
製造商產品編號MMBD301LT1G
訂購代碼2463431
Product RangeMMBD3
技術資料表
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage450mV
Diode Capacitance0.9pF
Diode Case StyleSOT-23
No. of Pins3 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product RangeMMBD3
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMBD301LT1G is a Silicon Hot-carrier Detector and Switching Diode designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications.
- 15ps Extremely low minority carrier lifetime
- 1.5pF at VR=15V Maximum very low capacitance
- 13nA DC Low reverse leakage IR
- -55 to 125°C Operating junction temperature range
應用
RF Communications, Sensing & Instrumentation, Industrial
技術規格
Diode Configuration
Single
Forward Current
200mA
Diode Capacitance
0.9pF
No. of Pins
3 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (25-Jun-2025)
Reverse Voltage
30V
Forward Voltage
450mV
Diode Case Style
SOT-23
Diode Mounting
Surface Mount
Product Range
MMBD3
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000033