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MMBTA06LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 500 mA, 225 mW, SOT-23, Surface Mount
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198880 件可于 3-4 個工作日後配送(英國 件庫存)
15263 件可于 4-5 個工作日後配送(美國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$3.140 |
| 50+ | NT$2.540 |
| 100+ | NT$1.940 |
| 500+ | NT$1.240 |
| 1500+ | NT$1.220 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$15.70
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號MMBTA06LT1G
訂購代碼9555897
Product RangeMMBTxxxx
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current500mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
MMBTA06LT1G is a driver transistor.
- Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C)
- Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C
- Collector current - continuous is 500mAdc
- Electrostatic discharge HBM Class 3B, MM Class C, CDM Class IV
- Total device dissipation FR-5 board is 225mW max (TA = 25°C)
- Thermal resistance, junction-to-ambient is 556°C/W max
- DC current gain is 100 min (IC = 10mAdc, VCE = 1.0VDC, TA = 25°C)
- Current-gain - bandwidth product is 100MHz min (IC = 10mA, VCE = 2.0 V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
技術規格
Transistor Polarity
NPN
Continuous Collector Current
500mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
MMBTA06LT1G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.000031