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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$6.540 | NT$32.70 |
| 總計 價格 | NT$32.70 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$6.540 |
| 50+ | NT$5.290 |
| 100+ | NT$4.030 |
| 500+ | NT$2.680 |
| 1500+ | NT$2.630 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$1.950 |
| 9000+ | NT$1.620 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NDS0605
訂購代碼
整卷2438360
複捲式9846352RL
條帶式包裝9846352
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id180mA
Drain Source On State Resistance5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
技術規格
Channel Type
P Channel
Continuous Drain Current Id
180mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
NDS0605 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000033
