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13,379 有存貨
3,000 即日起您可預購補貨
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| 數量 | 價格 |
|---|---|
| 5+ | NT$5.290 |
| 50+ | NT$4.550 |
| 100+ | NT$3.810 |
| 500+ | NT$2.450 |
| 1500+ | NT$2.410 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$26.45
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號NDS7002A
訂購代碼9845437
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id280mA
Drain Source On State Resistance2ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
- High density cell design for extremely low RDS (ON)
- High saturation current capability
- Voltage controlled small signal switch
- Rugged and reliable
應用
Power Management, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
280mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
NDS7002A 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000035