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NDT456P
Power MOSFET, P Channel, 30 V, 7.3 A, 0.03 ohm, SOT-223, Surface Mount
34,900 有存貨
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34,900 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$50.810 | NT$254.05 |
| 總計 價格 | NT$254.05 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$50.810 |
| 50+ | NT$45.730 |
| 250+ | NT$43.020 |
| 1000+ | NT$39.970 |
| 2000+ | NT$37.260 |
整卷
| 數量 | 價格 |
|---|---|
| 4000+ | NT$19.820 |
| 12000+ | NT$19.430 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NDT456P复制
製造商標準前置時間15 週
訂購代碼
整卷2438494
複捲式9846190RL
條帶式包裝9846190
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.3A
Drain Source On State Resistance0.03ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate-source voltage
應用
Power Management, Motor Drive & Control
技術規格
Channel Type
P Channel
Continuous Drain Current Id
7.3A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
NDT456P 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000272