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5,107 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$57.630 |
| 10+ | NT$34.120 |
| 100+ | NT$24.380 |
| 500+ | NT$23.900 |
| 1000+ | NT$23.410 |
| 5000+ | NT$22.920 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$57.63
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTD20N03L27T4G复制
製造商標準前置時間22 週
訂購代碼2317623
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance0.027ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation74W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTD20N03L27T4G is a N-channel logic level vertical general purpose Power MOSFET provides the best of design in a power package. Avalanche energy issues make this part is an ideal design. The drain-to-source diode has an ideal fast but soft recovery.
- Ultra-low RDS (ON), single base, advanced technology
- Diode is characterized for use in bridge circuits
- IDSS and VDS (ON) Specified at elevated temperatures
- High avalanche energy specified
- ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
- -55 to 175°C Operating temperature range
應用
Power Management, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
5V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.027ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
NTD20N03L27T4G 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000446
