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NTD3055L104T4G
Power MOSFET, N Channel, 60 V, 12 A, 0.104 ohm, TO-252 (DPAK), Surface Mount
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14,940 有存貨
12,500 即日起您可預購補貨
14,940 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$66.860 |
| 10+ | NT$31.780 |
| 100+ | NT$28.370 |
| 500+ | NT$22.330 |
| 1000+ | NT$17.690 |
| 5000+ | NT$17.340 |
價格Each
最少: 1
多項: 1
NT$66.86
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTD3055L104T4G复制
製造商標準前置時間54 週
訂購代碼2317615
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id12A
Drain Source On State Resistance0.104ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation48W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTD3055L104T4G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
- Lower RDS (ON)
- Lower VDS (ON)
- Lower and tighter VSD
- Lower diode reverse recovery time
- Lower reverse recovery stored charge
- -55 to 175°C Operating temperature range
應用
Power Management, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
5V
Power Dissipation
48W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.104ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
4Pins
Product Range
-
MSL
-
NTD3055L104T4G 的替代選擇
找到 8 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Vietnam
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Vietnam
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00033