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NTHL060N090SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 46 A, 900 V, 0.06 ohm, TO-247
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450 即日起您可預購補貨
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| 數量 | 價格 |
|---|---|
| 1+ | NT$388.670 |
| 5+ | NT$324.320 |
| 10+ | NT$259.970 |
| 50+ | NT$254.780 |
| 100+ | NT$249.580 |
| 250+ | NT$244.380 |
價格Each
最少: 1
多項: 1
NT$388.67
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTHL060N090SC1复制
製造商標準前置時間54 週
訂購代碼3367856
Product RangeEliteSiC Series
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id46A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.7V
Power Dissipation221W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (25-Jun-2025)
產品總覽
NTHL060N090SC1 is an EliteSiC silicon carbide (SiC) MOSFET. Typical applications are UPS, DC to DC converter, and boost inverter.
- 100% UIL tested
- Low effective output capacitance (typ. Coss= 113pF)
- Typical RDS(on)= 60mohm at VGS = 15V
- Ultra low gate charge (typical QG(tot)= 87nC)
- Drain-to-source voltage is 900V at TJ = 25°C
- Gate-to-source voltage is +22/-8V at TJ = 25°C
- Operating junction and storage temperature range from -55 to +175°C
- TO-247-3LD package
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
46A
Drain Source On State Resistance
0.06ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
Lead (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
221W
Product Range
EliteSiC Series
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.009384