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NTMD4184PFR2G
Power MOSFET, FETKY, P Channel, 30 V, 3.3 A, 0.095 ohm, SOIC, Surface Mount
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不再生產
包裝選項
產品訊息
製造商ONSEMI
製造商產品編號NTMD4184PFR2G复制
訂購代碼
複捲式3368851RL
條帶式包裝3368851
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.3A
Drain Source On State Resistance0.095ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.095ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (15-Jan-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0004