列印頁面
NTMFS5C604NLT1G
Power MOSFET, N Channel, 60 V, 276 A, 930 µohm, DFN, Surface Mount
4,267 有存貨
3,000 即日起您可預購補貨
2,843 件可于 1-2 個工作日後配送(新加坡 件庫存)
1,424 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$174.250 | NT$174.25 |
| 總計 價格 | NT$174.25 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$174.250 |
| 10+ | NT$156.830 |
| 100+ | NT$147.530 |
| 500+ | NT$123.380 |
| 1000+ | NT$115.970 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTMFS5C604NLT1G复制
製造商標準前置時間16 週
訂購代碼
複捲式2452046RL
條帶式包裝2452046
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id276A
Drain Source On State Resistance930µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation3.2W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The NTMFS5C604NLT1G is a N-channel Power MOSFET offers 60V drain source voltage and 276A continuous drain current.
- Small footprint (5 x 6mm) for compact design
- Low RDS (ON) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- -55 to 150°C Operating junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
276A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
3.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
930µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000222