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NTR4003NT1G
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號NTR4003NT1G
訂購代碼1453635RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id560mA
Drain Source On State Resistance1.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Gate Source Threshold Voltage Max1.4V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches.
- Low gate voltage threshold VGS (th) to facilitate drive circuit design
- Low gate charge for fast switching
- ESD protected gate
- SOT-23 Package provides excellent thermal performance
- Minimum breakdown voltage rating of 30V
- -55 to 150°C Operating junction temperature range
應用
Power Management, Computers & Computer Peripherals, Portable Devices, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
560mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
3Pins
Product Range
-
MSL
-
NTR4003NT1G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000073