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2,585 有存貨
24,000 即日起您可預購補貨
2,585 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$15.050 | NT$75.25 |
| 總計 價格 | NT$75.25 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$15.050 |
| 50+ | NT$12.360 |
| 100+ | NT$9.670 |
| 500+ | NT$6.600 |
| 1500+ | NT$6.470 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$5.250 |
| 9000+ | NT$5.150 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTR4171PT1G复制
製造商標準前置時間54 週
訂購代碼
整卷2317888
複捲式2464120RL
條帶式包裝2464120
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.5A
Drain Source On State Resistance0.075ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.15V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media players.
- Low RDS (ON) at low gate voltage
- Low threshold voltage
- High power and current handling capability
- -55 to 150°C Operating junction temperature range
應用
Power Management, Portable Devices, Multimedia, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.5A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.15V
No. of Pins
3Pins
Product Range
-
MSL
-
NTR4171PT1G 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000033
