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NVHL080N120SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 44 A, 1.2 kV, 0.08 ohm, TO-247
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| 數量 | 價格 |
|---|---|
| 1+ | NT$545.160 |
| 5+ | NT$463.850 |
| 10+ | NT$382.530 |
| 50+ | NT$365.550 |
| 100+ | NT$348.570 |
| 250+ | NT$341.600 |
價格Each
最少: 1
多項: 1
NT$545.16
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NVHL080N120SC1复制
製造商標準前置時間12 週
訂購代碼3018978
Product RangeEliteSiC Series
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id44A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCLead (25-Jun-2025)
產品總覽
NVHL080N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are automotive on board charger, automotive DC-DC converter for EV/HEV.
- AEC-Q101 qualified and PPAP capable
- 100% UIL tested
- Low effective output capacitance (typ. Coss= 80pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current RJC is 31A at TC = 25°C
- Power dissipation RJC is 89W at TC = 100°C
- Single pulse surge drain current capability is 132A at TA = 25°C, tp = 10µs, RG = 4.7ohm
- Operating junction and storage temperature range from -55 to +175°C
- TO247-3L package
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
44A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
348W
Product Range
EliteSiC Series
SVHC
Lead (25-Jun-2025)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85413000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.010584