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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$207.690 | NT$207.69 |
| 總計 價格 | NT$207.69 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$207.690 |
| 10+ | NT$136.100 |
| 100+ | NT$99.970 |
| 500+ | NT$88.820 |
| 1000+ | NT$79.020 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NVMFD5C446NLT1G复制
製造商標準前置時間20 週
訂購代碼
複捲式2835598RL
條帶式包裝2835598
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel145A
Continuous Drain Current Id P Channel145A
Drain Source On State Resistance N Channel0.00265ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleDFN
No. of Pins8Pins
Power Dissipation N Channel125W
Power Dissipation P Channel125W
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
NVMFD5C446NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 40V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -5.2mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 2.2mohm typical at (VGS = 10V, ID = 20A)
- Input capacitance is 3170pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 7nC typical at (VGS = 4.5V, VDS = 32V; ID = 50A)
- Turn-on delay time is 14.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Rise time is 16.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
145A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
125W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
145A
Drain Source On State Resistance N Channel
0.00265ohm
Transistor Case Style
DFN
Power Dissipation N Channel
125W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000012

