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NVMFD5C680NLT1G
Dual MOSFET, N Channel, 60 V, 60 V, 26 A, 26 A, 0.028 ohm
可供訂購
製造商標準交貨時間：20 週
有貨時通知我
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$88.290 | NT$88.29 |
| 總計 價格 | NT$88.29 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$88.290 |
| 10+ | NT$43.330 |
| 100+ | NT$39.130 |
| 500+ | NT$38.350 |
| 1000+ | NT$37.570 |
| 5000+ | NT$36.790 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NVMFD5C680NLT1G复制
製造商標準前置時間20 週
訂購代碼
複捲式2835612RL
條帶式包裝2835612
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel26A
Continuous Drain Current Id P Channel26A
Drain Source On State Resistance N Channel0.028ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleDFN
No. of Pins8Pins
Power Dissipation N Channel19W
Power Dissipation P Channel19W
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
NVMFD5C680NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -4.3mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 23mohm typical at (VGS = 10V, ID = 5A)
- Input capacitance is 350pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 0.8nC typical at (VGS = 4.5V, VDS = 48V; ID = 10A)
- Turn-on delay time is 6.4ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Rise time is 25ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
26A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
19W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
26A
Drain Source On State Resistance N Channel
0.028ohm
Transistor Case Style
DFN
Power Dissipation N Channel
19W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000012