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935 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$22.330 |
| 10+ | NT$15.500 |
| 25+ | NT$14.100 |
| 50+ | NT$12.690 |
| 100+ | NT$11.290 |
| 500+ | NT$8.320 |
價格Each
最少: 1
多項: 1
NT$22.33
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號QEE113复制
訂購代碼1652528
技術資料表
Peak Wavelength945nm
Angle of Half Intensity50°
Diode Case StyleSide Looking
Radiant Intensity (Ie)7.5mW/Sr
Rise Time800ns
Fall Time tf800ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.5V
Operating Temperature Min-40°C
Operating Temperature Max100°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The QEE113 is a 940nm GaAs Infrared LED is suitable for QSE113 photosensor. It has 50° medium wide emission angle and grey stripe on the top side. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. It is suitable for use in medical electronics/devices, automation, test and measurement, building & home control.
- GaAs chip material
- High output power
技術規格
Peak Wavelength
945nm
Diode Case Style
Side Looking
Rise Time
800ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
50°
Radiant Intensity (Ie)
7.5mW/Sr
Fall Time tf
800ns
Forward Voltage VF Max
1.5V
Operating Temperature Max
100°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000185

