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FDB2710
Power MOSFET, N Channel, 250 V, 50 A, 0.0425 ohm, TO-263AB, Surface Mount
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可供訂購
製造商標準交貨時間：54 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$230.560 |
| 10+ | NT$132.900 |
| 100+ | NT$108.330 |
| 500+ | NT$88.290 |
| 1000+ | NT$86.530 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$230.56
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDB2710复制
製造商標準前置時間54 週
訂購代碼
條帶式包裝2453390
條帶式包裝2453390RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0425ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation260W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (25-Jun-2025)
產品總覽
The FDB2710 is a N-channel MOSFET produced using PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
260W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.0425ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDB2710 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001312