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541 有存貨
1,600 即日起您可預購補貨
10 件可于 1-2 個工作日後配送(新加坡 件庫存)
531 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$109.420 | NT$109.42 |
| 總計 價格 | NT$109.42 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$109.420 |
| 10+ | NT$66.530 |
| 100+ | NT$49.310 |
| 500+ | NT$48.330 |
| 1000+ | NT$47.340 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDB28N30TM复制
製造商標準前置時間38 週
訂購代碼
複捲式2453391RL
條帶式包裝2453391
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id28A
Drain Source On State Resistance0.129ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation250W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDB28N30TM is a N-channel enhancement-mode Power FET produced using planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
- Improved dV/dt capability
- 100% avalanche tested
- Fast switching
- 39nC typical low gate charge
- 35pF typical low Crss
技術規格
Channel Type
N Channel
Continuous Drain Current Id
28A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.129ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001312
