列印頁面
FDC6320C.
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 5 ohm
无库存
產品訊息
製造商ONSEMI
製造商產品編號FDC6320C.
訂購代碼1611645RL
技術資料表
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id220mA
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)5ohm
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel220mA
Transistor MountingSurface Mount
Rds(on) Test Voltage2.7V
Drain Source On State Resistance P Channel13ohm
Gate Source Threshold Voltage Max850mV
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
220mA
On Resistance Rds(on)
5ohm
Continuous Drain Current Id P Channel
220mA
Rds(on) Test Voltage
2.7V
Gate Source Threshold Voltage Max
850mV
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
220mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
13ohm
Transistor Case Style
SuperSOT
Power Dissipation Pd
900mW
Power Dissipation P Channel
900mW
Product Range
-
Automotive Qualification Standard
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001