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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
產品訊息
製造商ONSEMI
製造商產品編號FDC6321C
訂購代碼9844848RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeN and P Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id460mA
On Resistance Rds(on)0.33ohm
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.45ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel1.1ohm
Gate Source Threshold Voltage Max800mV
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
應用
Industrial, Power Management
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
On Resistance Rds(on)
0.33ohm
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance N Channel
0.45ohm
Drain Source On State Resistance P Channel
1.1ohm
Transistor Case Style
SuperSOT
Power Dissipation Pd
900mW
Power Dissipation P Channel
900mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
460mA
Continuous Drain Current Id N Channel
680mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
FDC6321C 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.000113