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FDG6304P.
Dual MOSFET, P Channel, 25 V, 410 mA
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產品訊息
製造商ONSEMI
製造商產品編號FDG6304P.
訂購代碼1653657RL
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds25V
Continuous Drain Current Id410mA
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)1.1ohm
Continuous Drain Current Id N Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max820mV
Transistor Case StyleSC-70
Power Dissipation Pd300mW
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id
410mA
On Resistance Rds(on)
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
820mV
Power Dissipation Pd
300mW
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
Channel Type
P Channel
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
-
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.04