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FDMC510P
Power MOSFET, P Channel, 20 V, 18 A, 8000 µohm, MLP, Surface Mount
圖片僅供舉例說明。 請參閱產品描述。
6,427 有存貨
12,000 即日起您可預購補貨
6,427 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$69.880 | NT$349.40 |
| 總計 價格 | NT$349.40 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$69.880 |
| 50+ | NT$61.770 |
| 100+ | NT$53.650 |
| 500+ | NT$43.450 |
| 1500+ | NT$42.590 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMC510P复制
製造商標準前置時間49 週
訂購代碼
複捲式1885764RL
條帶式包裝1885764
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id18A
Drain Source On State Resistance8000µohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDMC510P is a P-channel MOSFET produced using advanced PowerTrench® process. It is suitable for battery management and load switch applications.
- High-performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
- 2kV typical HBM ESD protection level
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
MLP
Rds(on) Test Voltage
4.5V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
8000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000066