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FDMS86202ET120
Power MOSFET, N Channel, 120 V, 102 A, 7200 µohm, Power 56, Surface Mount
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製造商ONSEMI
製造商產品編號FDMS86202ET120复制
製造商標準前置時間28 週
訂購代碼
複捲式3368748RL
條帶式包裝3368748
Product RangePowerTrench
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製造商標準交貨時間：28 週
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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$248.660 | NT$248.66 |
| 總計 價格 | NT$248.66 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$248.660 |
| 10+ | NT$133.870 |
| 100+ | NT$122.870 |
| 500+ | NT$118.030 |
| 1000+ | NT$111.560 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMS86202ET120复制
製造商標準前置時間28 週
訂購代碼
複捲式3368748RL
條帶式包裝3368748
Product RangePowerTrench
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id102A
Drain Source On State Resistance7200µohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation187W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangePowerTrench
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
FDMS86202ET120 is a N-channel shielded gate PowerTrench® MOSFET. This N-channel MOSFET is produced using Fairchild Semiconductor’s Advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application includes DC-DC conversion.
- Shielded gate MOSFET Technology
- Advanced package and silicon combination for low rDS(on) and high efficiency
- 100% UIL tested
- 120V drain to source voltage (TA = 25°C), 102A continuous drain current (TC = 25°C)
- 3.1V maximum gate source threshold voltage (VGS=VDS, ID=250μA), 187W power dissipation (TC=25°C)
- 3275pF typical input capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 460pF typical output capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 8.75ns typical rise time (VDD = 60V, ID = 13.5A, VGS = 10V, RGEN = 6ohm)
- 14.3nC gate to source charge typical (ID = 13.5A, VDD = 60V, TJ = 25°C)
- 8 pin power 56 package, operating temperature range from -55 to +175°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
102A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
187W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
120V
Drain Source On State Resistance
7200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
PowerTrench
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0004