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FDN342P
Power MOSFET, P Channel, 20 V, 2 A, 0.062 ohm, SuperSOT, Surface Mount
946 有存貨
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946 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$32.970 | NT$32.97 |
| 總計 價格 | NT$32.97 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$32.970 |
| 10+ | NT$20.550 |
| 100+ | NT$13.320 |
| 500+ | NT$10.260 |
| 1000+ | NT$9.240 |
| 5000+ | NT$7.960 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDN342P
訂購代碼
複捲式1611160RL
條帶式包裝1611160
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
Drain Source On State Resistance0.062ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.05V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDN342P is a 2.5V specified P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for load switch and battery protection applications requiring a wide range of gate drive voltage ratings (2.5 to 12V).
- High performance Trench technology for extremely low RDS (ON)
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.062ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.05V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDN342P 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000055