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FDS2582
Power MOSFET, N Channel, 150 V, 4.1 A, 0.066 ohm, SOIC, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDS2582
訂購代碼1076350
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.066ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
FDS2582 的替代選擇
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產品總覽
The FDS2582 is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench® process. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
- Low miller charge
- Low Qrr body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive pulse) formerly developmental type 82855
應用
Power Management, Automotive
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000284