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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$38.170 | NT$190.85 |
| 總計 價格 | NT$190.85 | ||
| 數量 | 價格 |
|---|---|
| 5+ | NT$38.170 |
| 50+ | NT$31.610 |
| 100+ | NT$25.040 |
| 500+ | NT$19.660 |
| 1000+ | NT$16.830 |
產品訊息
FDS4897C 的替代選擇
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產品總覽
The FDS4897C is a 40V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Complementary N and P Channel
40V
6.2A
0.021ohm
8Pins
2W
-
MSL 1 - Unlimited
40V
6.2A
0.021ohm
SOIC
2W
150°C
-
No SVHC (23-Jan-2024)
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法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
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