列印頁面
FDS5351
Power MOSFET, N Channel, 60 V, 6.1 A, 0.0265 ohm, SOIC, Surface Mount
59 有存貨
需要更多？
59 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$38.420 |
| 10+ | NT$24.080 |
| 100+ | NT$15.880 |
| 500+ | NT$12.330 |
| 1000+ | NT$11.180 |
| 5000+ | NT$10.500 |
價格Each
最少: 1
多項: 1
NT$38.42
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDS5351复制
製造商標準前置時間54 週
訂購代碼2322609
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id6.1A
Drain Source On State Resistance0.0265ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS5351 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is suitable for inverter switch, synchronous rectifier and load switch.
- High performance Trench technology for extremely low RDS (ON)
- 100% UIL Tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
6.1A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0265ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.01