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FDS6699S
Power MOSFET, N Channel, 30 V, 21 A, 3600 µohm, SOIC, Surface Mount
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不再生產
包裝選項
產品訊息
製造商ONSEMI
製造商產品編號FDS6699S复制
訂購代碼
複捲式1495213RL
條帶式包裝1495213
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id21A
Drain Source On State Resistance3600µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation2.5mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild's monolithic SyncFET™ technology.
- High performance Trench technology for extremely low RDS (ON) and fast switching
- High power and current handling capability
- 100% RG (gate resistance) tested
應用
Power Management, Portable Devices, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005