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FDS8447
Power MOSFET, N Channel, 40 V, 12.8 A, 0.0105 ohm, SOIC, Surface Mount
不再生產
包裝選項
產品訊息
製造商ONSEMI
製造商產品編號FDS8447复制
訂購代碼
複捲式1495221RL
條帶式包裝1495221
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id12.8A
Drain Source On State Resistance0.0105ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation2.5mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS8447 is a single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0105ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000224