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FDS8958B.
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.4 A, 6.4 A, 0.021 ohm
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產品訊息
製造商ONSEMI
製造商產品編號FDS8958B.复制
訂購代碼
複捲式2454159RL
條帶式包裝2454159
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6.4A
Continuous Drain Current Id P Channel6.4A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
產品總覽
The FDS8958B is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. It is suitable for use with DC-to-DC converter, BLU and motor drive inverter applications.
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6.4A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6.4A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000187