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FDS8960C
Dual MOSFET, N Channel, 35 V, 7 A, 0.024 ohm
產品訊息
製造商ONSEMI
製造商產品編號FDS8960C
訂購代碼1228338RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds35V
Drain Source Voltage Vds N Channel35V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id7A
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
FDS8960C 的替代選擇
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產品總覽
The FDS8960C is a dual N/P-channel enhancement-mode MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
35V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.024ohm
Continuous Drain Current Id P Channel
-
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
35V
Continuous Drain Current Id
7A
Continuous Drain Current Id N Channel
7A
Transistor Mounting
Surface Mount
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000218