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產品訊息
製造商ONSEMI
製造商產品編號FDY300NZ复制
訂購代碼
複捲式1495196RL
條帶式包裝1495196
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id600mA
Drain Source On State Resistance0.24ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
產品總覽
The FDY300NZ is a single N-channel MOSFET produced using advanced PowerTrench® process to optimize the RDS (ON) at VGS = 2.5V. It is suitable for Li-ion battery pack application.
- ESD protection diode
技術規格
Channel Type
N Channel
Continuous Drain Current Id
600mA
Transistor Case Style
SC-89
Rds(on) Test Voltage
4.5V
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.24ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:South Korea
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000109
