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| 數量 | 價格 |
|---|---|
| 1+ | NT$174.780 |
| 10+ | NT$114.600 |
| 100+ | NT$66.270 |
| 500+ | NT$62.420 |
| 1000+ | NT$62.400 |
價格Each
最少: 1
多項: 1
NT$174.78
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FQA46N15复制
製造商標準前置時間52 週
訂購代碼2322622
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id50A
Drain Source On State Resistance0.033ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
FQA46N15 的替代選擇
找到 1 個產品
產品總覽
The FQA46N15 is a 150V N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 85nC)
- Low Crss (typical 100pF)
- 100% avalanche tested
- ±25V gate source voltage
- 40°C/W thermal resistance, junction to ambient
- 0.6°C/W thermal resistance, junction to case
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.033ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (17-Jan-2022)
下載產品合規憑證
產品合規憑證
重量 (公斤):.007091

