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FQN1N50CTA
Power MOSFET, N Channel, 500 V, 380 mA, 6 ohm, TO-226AA, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQN1N50CTA复制
訂購代碼2453901
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id380mA
Drain Source On State Resistance6ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation890mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (14-Jun-2023)
產品總覽
The FQN1N50CTA is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 4.9nC typical low gate charge
- 4.1pF typical low Crss
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
380mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
890mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (14-Jun-2023)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (14-Jun-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00024