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FQP8N80C
Power MOSFET, N Channel, 800 V, 8 A, 1.29 ohm, TO-220AB, Through Hole
1,772 有存貨
1,000 即日起您可預購補貨
1,772 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$155.860 |
| 10+ | NT$83.100 |
| 100+ | NT$75.030 |
| 500+ | NT$73.530 |
| 1000+ | NT$72.030 |
價格Each
最少: 1
多項: 1
NT$155.86
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FQP8N80C复制
製造商標準前置時間54 週
訂購代碼2453446
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id8A
Drain Source On State Resistance1.29ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation178W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FQP8N80C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (35nC)
- Low Crss (13pF)
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
178W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.29ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0018