列印頁面
FQPF6N80C
Power MOSFET, N Channel, 800 V, 5.5 A, 2.5 ohm, TO-220F, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQPF6N80C复制
訂購代碼1095094
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id5.5A
Drain Source On State Resistance2.5ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation51W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FQPF6N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
應用
Power Management, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
51W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
2.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002105