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HGTP7N60A4
IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 Pins
不再生產
產品總覽
The HGTP7N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
- 1.9V @ IC = 7A Low saturation voltage
- 75ns Fall time @ TJ = 125°C
- 125W Total power dissipation @ TC = 25°C
應用
Power Management, Maintenance & Repair
技術規格
Continuous Collector Current
34A
Power Dissipation
125W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.002033