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MMBD301LT1G
RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 450 mV, 0.9 pF, SOT-23
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產品訊息
製造商ONSEMI
製造商產品編號MMBD301LT1G
訂購代碼2317676
Product RangeMMBD3
技術資料表
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage450mV
Diode Capacitance0.9pF
Diode Case StyleSOT-23
No. of Pins3 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product RangeMMBD3
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMBD301LT1G is a Silicon Hot-carrier Detector and Switching Diode designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications.
- 15ps Extremely low minority carrier lifetime
- 1.5pF at VR=15V Maximum very low capacitance
- 13nA DC Low reverse leakage IR
- -55 to 125°C Operating junction temperature range
應用
RF Communications, Sensing & Instrumentation, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Diode Configuration
Single
Forward Current
200mA
Diode Capacitance
0.9pF
No. of Pins
3 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (25-Jun-2025)
Reverse Voltage
30V
Forward Voltage
450mV
Diode Case Style
SOT-23
Diode Mounting
Surface Mount
Product Range
MMBD3
MMBD301LT1G 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000029