NCP51563BBDWR2G

NCP51563BBDWR2G is an isolated dual channel gate driver. It is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51563 offers short and matched propagation delays. Two independent and 5kVRMS internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1850VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively. Typical application includes motor drives, isolated converters in DC-DC and AC-DC power supply, server, telecom, and industrial infrastructures, UPS and solar inverters.

• High current dual isolated MOS driver
• Flexible dual low side, dual high side or half bridge gate driver
• 4.5A peak source, 9A peak sink output current capability
• Independent UVLO protections for both output drivers
• Common mode transient immunity CMTI <gt/> 200V/ns
• User programmable dead time
• 5KVRMS isolation for 1minute (per UL1577 requirements)
• 8000VPK reinforced isolation voltage (per VDE0884−11 Requirements)
• SOIC−16 WB package
• Ambient temperature range from -40 to +125°C