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NST856MTWFTBG
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 650 mW, XDFNW, Surface Mount
3,000 有存貨
需要更多？
3,000 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$17.290 | NT$86.45 |
| 總計 價格 | NT$86.45 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$17.290 |
| 10+ | NT$10.600 |
| 100+ | NT$6.730 |
| 500+ | NT$5.060 |
| 1000+ | NT$3.590 |
| 5000+ | NT$3.520 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NST856MTWFTBG复制
製造商標準前置時間10 週
訂購代碼
複捲式4583066RL
條帶式包裝4583066
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max65V
Continuous Collector Current100mA
Power Dissipation650mW
Transistor Case StyleXDFNW
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min220hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
NST856MTWFTBG is a PNP, 65V, 100mA general purpose transistor designed for general purpose amplifier applications. It is housed in an ultra−compact DFN1010−3 with wettable flanks, recommended for the automotive industry’s optical inspection methods. The transistor is ideal for low−power surface mount applications where board space and reliability are at a premium.
- Total power dissipation per device at TA = 25°C is 570mW
- Junction temperature range from −65 to +150°C
技術規格
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Case Style
XDFNW
No. of Pins
3Pins
DC Current Gain hFE Min
220hFE
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Collector Emitter Voltage Max
65V
Power Dissipation
650mW
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001