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NTBG032N065M3S
Silicon Carbide MOSFET, Single, N Channel, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
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製造商ONSEMI
製造商產品編號NTBG032N065M3S复制
製造商標準前置時間18 週
訂購代碼
複捲式4583070RL
條帶式包裝4583070
Product RangeEliteSiC Series
您的零件号
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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$322.170 | NT$322.17 |
| 總計 價格 | NT$322.17 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$322.170 |
| 5+ | NT$271.350 |
| 10+ | NT$220.520 |
| 50+ | NT$216.110 |
| 100+ | NT$211.700 |
| 250+ | NT$207.290 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTBG032N065M3S复制
製造商標準前置時間18 週
訂購代碼
複捲式4583070RL
條帶式包裝4583070
Product RangeEliteSiC Series
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id52A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.044ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (04-Feb-2026)
產品總覽
NTBG032N065M3S is a 650V M3S planar SiC MOSFET in a 7 pin D2PAK package. It is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. Typical applications include SMPS, solar inverters, UPS, energy storages, EV charging infrastructure.
- Drain to source voltage is 650V, maximum drain current is 52A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 113pF)
- 100% avalanche tested
- Operating junction temperature range from -55 to +175°C
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
52A
Drain Source On State Resistance
0.044ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
Lead (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
200W
Product Range
EliteSiC Series
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001