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NTR5198NLT1G
Power MOSFET, N Channel, 60 V, 2.2 A, 0.107 ohm, SOT-23, Surface Mount
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61231 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$13.560 |
| 10+ | NT$7.520 |
| 100+ | NT$5.170 |
| 500+ | NT$3.940 |
| 1000+ | NT$2.460 |
| 5000+ | NT$2.240 |
價格Each
最少: 5
多項: 5
NT$67.80
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTR5198NLT1G
訂購代碼2399121
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.107ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTR5198NLT1G is a N-channel Power MOSFET offers 60V drain source voltage and 2.2A continuous drain current. It has low RDS (ON) for low conduction losses and improved efficiency.
- Small footprint surface-mount package
- Halogen-free
- -55 to 150°C Operating junction temperature range
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.107ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
NTR5198NLT1G 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000454