SI4532DY
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.9 A, 3.9 A, 0.053 ohm
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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$53.360 | NT$53.36 |
| 總計 價格 | NT$53.36 | ||
| 數量 | 價格 |
|---|---|
| 1+ | NT$53.360 |
| 10+ | NT$25.200 |
| 100+ | NT$22.440 |
| 500+ | NT$22.000 |
| 1000+ | NT$21.550 |
| 5000+ | NT$21.100 |
產品訊息
產品總覽
The SI4532DY is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
應用
Industrial, Power Management, Computers & Computer Peripherals
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Complementary N and P Channel
30V
3.9A
0.053ohm
8Pins
2W
-
MSL 1 - Unlimited
30V
3.9A
0.053ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
法規與環境保護
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證