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HFA3128BZ
Bipolar Transistor Array, Five PNP, 12 V, 37 mA
不再生產
產品訊息
製造商RENESAS
製造商產品編號HFA3128BZ复制
訂購代碼1562030
技術資料表
Transistor PolarityFive PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP12V
Continuous Collector Current NPN-
Continuous Collector Current PNP37mA
Power Dissipation NPN-
Power Dissipation PNP150mW
DC Current Gain hFE Min NPN-
DC Current Gain hFE Min PNP60hFE
Transistor Case StyleSOIC
No. of Pins16Pins
Transistor MountingSurface Mount
Operating Temperature Max125°C
Transition Frequency NPN-
Product Range-
Qualification-
產品總覽
The HFA3128BZ is a PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The transistor exhibits a fT of 5.5GHz, low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of this transistor array provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50Ω) at 1GHz
- <lt/>1pA Collector to collector leakage
- Complete isolation between transistors
應用
RF Communications, Sensing & Instrumentation, Industrial, Power Management
技術規格
Transistor Polarity
Five PNP
Collector Emitter Voltage Max PNP
12V
Continuous Collector Current PNP
37mA
Power Dissipation PNP
150mW
DC Current Gain hFE Min PNP
60hFE
No. of Pins
16Pins
Operating Temperature Max
125°C
Product Range
-
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
-
Power Dissipation NPN
-
DC Current Gain hFE Min NPN
-
Transistor Case Style
SOIC
Transistor Mounting
Surface Mount
Transition Frequency NPN
-
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000331