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RQ6E030ATTCR
Power MOSFET, P Channel, 30 V, 3 A, 0.091 ohm, TSMT, Surface Mount
產品訊息
製造商ROHM
製造商產品編號RQ6E030ATTCR
訂購代碼2706767
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3A
Drain Source On State Resistance0.091ohm
Transistor Case StyleTSMT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.25W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
TSMT
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.091ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
RQ6E030ATTCR 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005577