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RZF030P01TL
Power MOSFET, P Channel, 12 V, 3 A, 0.028 ohm, TUMT, Surface Mount
2,428 有存貨
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2,428 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$35.130 |
| 10+ | NT$22.740 |
| 100+ | NT$15.270 |
| 500+ | NT$11.800 |
| 1000+ | NT$8.220 |
| 5000+ | NT$8.060 |
價格Each
最少: 1
多項: 1
NT$35.13
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ROHM
製造商產品編號RZF030P01TL复制
製造商標準前置時間20 週
訂購代碼2143954
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id3A
Drain Source On State Resistance0.028ohm
Transistor Case StyleTUMT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max300mV
Power Dissipation800mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The RZF030P01TL is a P-channel silicon MOSFET offers -12V drain source voltage and ±3A continuous drain current. It is suitable for use in switching applications.
- Low ON-resistance
- High power package
- 1.5V Low drive voltage
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
TUMT
Rds(on) Test Voltage
4.5V
Power Dissipation
800mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
300mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.003316