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2N6661
Power MOSFET, MOSPOWER, N Channel, 90 V, 900 mA, 4 ohm, TO-205AF, Through Hole
不再生產
產品訊息
製造商SOLID STATE
製造商產品編號2N6661复制
訂購代碼2630600
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds90V
Continuous Drain Current Id900mA
Drain Source On State Resistance4ohm
Transistor Case StyleTO-205AF
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
2N6661 的替代選擇
找到 1 個產品
產品總覽
The 2N6661 is a 90V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.
應用
Power Management, Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
900mA
Transistor Case Style
TO-205AF
Rds(on) Test Voltage
10V
Power Dissipation
6.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
90V
Drain Source On State Resistance
4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001814